# decode-dimms version 5733 (2009-06-09 13:13:41 +0200)
Memory Serial Presence Detect Decoder
By Philip Edelbrock, Christian Zuckschwerdt, Burkart Lingner,
Jean Delvare, Trent Piepho and others
Decoding EEPROM: /sys/bus/i2c/drivers/eeprom/0-0050
Guessing DIMM is in bank 1
---=== SPD EEPROM Information ===---
EEPROM CRC of bytes 0-116 OK (0xF04C)
# of bytes written to SDRAM EEPROM 176
Total number of bytes in EEPROM 256
Fundamental Memory type DDR3 SDRAM
Module Type SO-DIMM
---=== Memory Characteristics ===---
Fine time base 2.500 ps
Medium time base 0.125 ns
Maximum module speed 1066MHz (PC3-8533)
Size 4096 MB
Banks x Rows x Columns x Bits 8 x 15 x 10 x 64
Ranks 2
SDRAM Device Width 8 bits
tCL-tRCD-tRP-tRAS 7-7-7-20
Supported CAS Latencies (tCL) 8T, 7T, 6T, 5T
---=== Timing Parameters ===---
Minimum Write Recovery time (tWR) 15.000 ns
Minimum Row Active to Row Active Delay (tRRD) 7.500 ns
Minimum Active to Auto-Refresh Delay (tRC) 50.625 ns
Minimum Recovery Delay (tRFC) 160.000 ns
Minimum Write to Read CMD Delay (tWTR) 7.500 ns
Minimum Read to Pre-charge CMD Delay (tRTP) 7.500 ns
Minimum Four Activate Window Delay (tFAW) 37.500 ns
---=== Optional Features ===---
Operable voltages 1.5V
RZQ/6 supported? Yes
RZQ/7 supported? Yes
DLL-Off Mode supported? Yes
Operating temperature range 0-95C
Refresh Rate in extended temp range 1X
Auto Self-Refresh? No
On-Die Thermal Sensor readout? No
Partial Array Self-Refresh? No
Thermal Sensor Accuracy Not implemented
SDRAM Device Type Standard Monolithic
---=== Physical Characteristics ===---
Module Height (mm) 30
Module Thickness (mm) 2 front, 2 back
Module Width (mm) 67.6
Module Reference Card F
---=== Manufacturer Data ===---
Module Manufacturer Samsung
DRAM Manufacturer Samsung
Manufacturing Location Code 0x02
Manufacturing Date 2011-W02
Assembly Serial Number 0x650F563B
Part Number M471B5273CH0-CF8
Decoding EEPROM: /sys/bus/i2c/drivers/eeprom/0-0051
Guessing DIMM is in bank 2
---=== SPD EEPROM Information ===---
EEPROM CRC of bytes 0-116 OK (0xF04C)
# of bytes written to SDRAM EEPROM 176
Total number of bytes in EEPROM 256
Fundamental Memory type DDR3 SDRAM
Module Type SO-DIMM
---=== Memory Characteristics ===---
Fine time base 2.500 ps
Medium time base 0.125 ns
Maximum module speed 1066MHz (PC3-8533)
Size 4096 MB
Banks x Rows x Columns x Bits 8 x 15 x 10 x 64
Ranks 2
SDRAM Device Width 8 bits
tCL-tRCD-tRP-tRAS 7-7-7-20
Supported CAS Latencies (tCL) 8T, 7T, 6T, 5T
---=== Timing Parameters ===---
Minimum Write Recovery time (tWR) 15.000 ns
Minimum Row Active to Row Active Delay (tRRD) 7.500 ns
Minimum Active to Auto-Refresh Delay (tRC) 50.625 ns
Minimum Recovery Delay (tRFC) 160.000 ns
Minimum Write to Read CMD Delay (tWTR) 7.500 ns
Minimum Read to Pre-charge CMD Delay (tRTP) 7.500 ns
Minimum Four Activate Window Delay (tFAW) 37.500 ns
---=== Optional Features ===---
Operable voltages 1.5V
RZQ/6 supported? Yes
RZQ/7 supported? Yes
DLL-Off Mode supported? Yes
Operating temperature range 0-95C
Refresh Rate in extended temp range 1X
Auto Self-Refresh? No
On-Die Thermal Sensor readout? No
Partial Array Self-Refresh? No
Thermal Sensor Accuracy Not implemented
SDRAM Device Type Standard Monolithic
---=== Physical Characteristics ===---
Module Height (mm) 30
Module Thickness (mm) 2 front, 2 back
Module Width (mm) 67.6
Module Reference Card F
---=== Manufacturer Data ===---
Module Manufacturer Samsung
DRAM Manufacturer Samsung
Manufacturing Location Code 0x02
Manufacturing Date 2011-W02
Assembly Serial Number 0x650F56BB
Part Number M471B5273CH0-CF8
Number of SDRAM DIMMs detected and decoded: 2